| Part Number | TBC559 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. THE TBC559 AND TBC560 IS ... |
| Features |
. High V CE0 : -45V (TBC560)
-25V (TBC559)
. High hFE = 125-475
Unit in mm
5. 1 MAX. , 1 :
< S
t-
0.45
I']
O.E35 MAX.
1
r
J
C.45
1!
m r
s CO 00
A c!
r-
r-t
1.27
m
/
1.27
\
X
23J
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC559 v (BR)CBO... |
| Datasheet | TBC559 pdf datasheet - 53.07KB |
| Part Number | TBC558 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES. |
| Features |
. High VcEO
. Low Noise
-65V (TBC556) -45V (TBC557) -30V (TBC558)
0.45
11
1.27
1.27
H^fj/ X 3
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC556 TBC557 TBC558
Collector-Emitter Breakdown Voltage
TBC556 TBC557 TBC558
Emitter-Base Breakdown Voltage
SYMBOL v (B. |
| Datasheet | TBC558 pdf datasheet |
| Part Number | TBC557 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES. |
| Features |
. High VcEO
. Low Noise
-65V (TBC556) -45V (TBC557) -30V (TBC558)
0.45
11
1.27
1.27
H^fj/ X 3
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC556 TBC557 TBC558
Collector-Emitter Breakdown Voltage
TBC556 TBC557 TBC558
Emitter-Base Breakdown Voltage
SYMBOL v (B. |
| Datasheet | TBC557 pdf datasheet |
| Part Number | TBC556 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES. |
| Features |
. High VcEO
. Low Noise
-65V (TBC556) -45V (TBC557) -30V (TBC558)
0.45
11
1.27
1.27
H^fj/ X 3
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC556 TBC557 TBC558
Collector-Emitter Breakdown Voltage
TBC556 TBC557 TBC558
Emitter-Base Breakdown Voltage
SYMBOL v (B. |
| Datasheet | TBC556 pdf datasheet |
| Part Number | TBC550 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) . |
| Features |
. Low Noise : 4dB Max. (TBC549)
3dB Max. (TBC550) . High V CE o : 30V (TBC549)
45V (TBC550)
. High hpE : 200 ~800
5MAX. jiil
TBC549 TBC550
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC549 V(BR)CBO
TBC550
Collector-Emitter Breakdown Voltage
T. |
| Datasheet | TBC550 pdf datasheet |
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