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TBC550 |
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| Part Number | TBC550 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC549 V. |
| Features | . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC549 V(BR)CBO TBC550 Collector-Emitter Breakdown Voltage TBC549 v (BR)CEO TBC550 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC Peak Base Current (Peak) Collector Power Dissipation Junction Temperature Storage Temperature Range ic ICP IBP Ti L stg RATING 30 50 30 45 UNIT 100 mA 200 200 mA 500 mW 150 -65-150 1. COLLECTOR . |
| Datasheet |
 TBC550 Data Sheet
PDF 52.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TBC556 |
Toshiba |
Silicon PNP Transistor |
|
| 2 | TBC557 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | TBC558 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | TBC559 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | TBC50C04 |
Token Electronics |
Hall Current Sensor |
|
| 6 | TBC50DS |
Token Electronics |
Hall Current Sensor |
|
| 7 | TBC546 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | TBC547 |
Toshiba |
Silicon NPN Transistor |
|
| 9 | TBC548 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | TBC549 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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