Busque con el número de pieza junto con el fabricante o la descripción
TBC547 |
Click to view a larger image
| Part Number | TBC547 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC546 TBC547 v (BR)CBO. |
| Features | . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC546 TBC547 v (BR)CBO TBC548 Collector-Emitter Breakdown Voltage TBC546 TBC547 V (BR) CEO TBC548 Emitter-Base Breakdown Voltage TBC546 TBC547 V (BR)EBO TBC548 DC ic Collector Current Peak ICP Base Current (Peak) IBP Collector Power Dissipation ?C Junction Temperature Ti Storage Temperature Range L stg RATING 80 50 30 65 45 30 UNIT 100 mA 200 200 mA 500. |
| Datasheet |
 TBC547 Data Sheet
PDF 52.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TBC546 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | TBC548 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | TBC549 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | TBC50C04 |
Token Electronics |
Hall Current Sensor |
|
| 5 | TBC50DS |
Token Electronics |
Hall Current Sensor |
|
| 6 | TBC550 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | TBC556 |
Toshiba |
Silicon PNP Transistor |
|
| 8 | TBC557 |
Toshiba |
Silicon PNP Transistor |
|
| 9 | TBC558 |
Toshiba |
Silicon PNP Transistor |
|
| 10 | TBC559 |
Toshiba |
Silicon PNP Transistor |
|
Desde 2024. D4U Semiconductor.
|