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| Part Number | SI2304 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SI2304 |
| Manufacturer | SiPU |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | Si2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 65@ VGS=4.5V 90@ VGS=2.5V NOTE The Si2304 is available in a lead-free . |
| Features | Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 65@ VGS=4.5V 90@ VGS=2.5V NOTE The Si2304 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward . |
| Part Number | SI2304 |
| Manufacturer | PUOLOP |
| Title | 30V N-Channel Enhancement Mode MOSFET |
| Description | SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack app. |
| Features | Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions - D SOT-23 GS REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.98 0° 1. |
similar datasheet
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|---|---|---|---|---|
| 1 | SI2300 |
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| 2 | SI2300 |
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| 5 | SI2300 |
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| 8 | SI2300DS |
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| 9 | SI2301 |
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| 10 | SI2301 |
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Desde 2024. D4U Semiconductor.
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