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S1808 |
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| Part Number | S1808 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS. AND DESIGNED FOR COMPLEMENTARY USE WITH S1807 FEATURES: • Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807 MAXIMUM RATINGS (T a=25°C _ CHARACTERISTIC Co llector-Base Voltage Collector-Emitter Vol. |
| Features |
• Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807 MAXIMUM RATINGS (T a=25°C _ CHARACTERISTIC Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipatioxi Junction Temperature Storage Temperature Range ELECTR ICAL CHARACTER I ST ICS (Ta=25°C CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain (1) DC Current Gain (2) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Ou. |
| Datasheet |
 S1808 Data Sheet
PDF 82.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S1805 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | S1806 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | S1807 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors |
|
| 10 | S1812 |
API Delevan |
Shielded Surface Mount Inductors |
|
Desde 2024. D4U Semiconductor.
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