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S1808 Silicon PNP Transistor Datasheet


S1808

Toshiba
S1808
Part Number S1808
Manufacturer Toshiba (https://www.toshiba.com/)
Title CAP CER 470PF 250VAC C0G 1808
Description SILICON PNP EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS. AND DESIGNED FOR COMPLEMENTARY ...
Features
• Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807 MAXIMUM RATINGS (T a=25°C _ CHARACTERISTIC Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipatioxi Junction Temperature ...

Document Datasheet S1808 datasheet pdf (82.63KB)
Distributor Distributor
DigiKey
Stock 5899 In stock
Price
1500 units: 0.8855 USD
500 units: 1.14478 USD
100 units: 1.4238 USD
50 units: 1.7172 USD
10 units: 1.869 USD
1 units: 2.43 USD
BuyNow BuyNow BuyNow (Manufacturer a Novacap LS1808N471K302NTM)



S1807

Toshiba
S1807
Part Number S1807
Manufacturer Toshiba
Title Silicon NPN Transistor
Description ) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1807 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPL.
Features . Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808. Unit in mm 5.1 MAX. a 55 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction T.

Document S1807 datasheet pdf


S1806

Toshiba
S1806
Part Number S1806
Manufacturer Toshiba
Title Silicon PNP Transistor
Description SILICON PHP EPITAXIAL TYPE (PCT PROCESS) . F S1806 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER ST.
Features h FE(2) VCE(sat) VCE =1V, I c =-50mA VCE =-1V, I c =-400mA I c =-100mA, T B =-5mA vBE(sat) I C =-100mA, I B =-5mA Base-Emitter Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VBE Vce=-1V, I c =-50mA v (BR) CBO l"C=-0.1mA, I E =0 v (BR) CEO I C =-lmA, I B =0 Colle.

Document S1806 datasheet pdf


S1805

Toshiba
S1805
Part Number S1805
Manufacturer Toshiba
Title Silicon NPN Transistor
Description : ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1805 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER S.
Features . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power.

Document S1805 datasheet pdf




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