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S1806 |
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| Part Number | S1806 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON PHP EPITAXIAL TYPE (PCT PROCESS) . F S1806 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. LOW FREQUENCY, MEDIUM POWER AMPLIFIERSDRIVER STAGE AMPLIFIERS. FEATIT?ES: . Excellent h FE vs. Collector Current Characteristics, hFE(2)=23Min. at VCE =-1V, I c =-400mA . Complem. |
| Features | h FE(2) VCE(sat) VCE =1V, I c =-50mA VCE =-1V, I c =-400mA I c =-100mA, T B =-5mA vBE(sat) I C =-100mA, I B =-5mA Base-Emitter Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VBE Vce=-1V, I c =-50mA v (BR) CBO l"C=-0.1mA, I E =0 v (BR) CEO I C =-lmA, I B =0 Collector Cut-off Current Emitter Cut-off Current : CB0 r EB0 VCB— 35V, IE =0 VEB =-5V, I C =0 MIN. TYP 70 _ 23 - RAX. 240 _ UNIT - - -0.25 V - - -1.2 V -0.65 -0.72 -0.80 V -40 - _ V -30 - - V - - -100 nA - - -100 nA 957- )) S1806 Ic - V CE w 1000 si 500 300 < hpE "- . |
| Datasheet |
 S1806 Data Sheet
PDF 81.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S1805 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | S1807 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | S1808 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors |
|
| 10 | S1812 |
API Delevan |
Shielded Surface Mount Inductors |
|
Desde 2024. D4U Semiconductor.
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