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S1806 Silicon PNP Transistor Datasheet


S1806

Toshiba
S1806
Part Number S1806
Manufacturer Toshiba (https://www.toshiba.com/)
Title 3KVRMS ISOLATED HALL-EFFECT CURR
Description SILICON PHP EPITAXIAL TYPE (PCT PROCESS) . F S1806 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER ST...
Features h FE(2) VCE(sat) VCE =1V, I c =-50mA VCE =-1V, I c =-400mA I c =-100mA, T B =-5mA vBE(sat) I C =-100mA, I B =-5mA Base-Emitter Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VBE Vce=-1V, I c =-50mA v (BR) CBO l"C=-0.1mA, I E =0 v (BR) CEO I C =-lmA, I B =0 Colle...

Document Datasheet S1806 datasheet pdf (81.26KB)
Distributor Distributor
DigiKey
Stock 35 In stock
Price
2500 units: 2.121 USD
1000 units: 2.19675 USD
500 units: 2.34824 USD
100 units: 2.8028 USD
50 units: 2.8784 USD
25 units: 3.03 USD
10 units: 3.409 USD
1 units: 4.54 USD
BuyNow BuyNow BuyNow (Manufacturer a Monolithic Power Systems MCS1806GS-5-20-P)



S1808

Toshiba
S1808
Part Number S1808
Manufacturer Toshiba
Title Silicon PNP Transistor
Description SILICON PNP EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS. AND DESIGNED FOR COMPLEMENTARY .
Features
• Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807 MAXIMUM RATINGS (T a=25°C _ CHARACTERISTIC Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipatioxi Junction Temperature .

Document S1808 datasheet pdf


S1807

Toshiba
S1807
Part Number S1807
Manufacturer Toshiba
Title Silicon NPN Transistor
Description ) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1807 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPL.
Features . Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808. Unit in mm 5.1 MAX. a 55 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction T.

Document S1807 datasheet pdf


S1805

Toshiba
S1805
Part Number S1805
Manufacturer Toshiba
Title Silicon NPN Transistor
Description : ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1805 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER S.
Features . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power.

Document S1805 datasheet pdf




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