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S1805 |
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| Part Number | S1805 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1805 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. HIGH RELIABILITY. LOW FREQUENCY MEDIUM POWER AMPLIFIERS- DRIVER STAGE AMPLIFIERS. FEATURES . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r . |
| Features | . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Range Storage Temperature SYMBOL VCBO 'CEO vEBO IB [ stg RATING 40 30 500 250 625 150 -55-150 UNIT V mA mA mV °C 1. EMITTER 2. BASE 3. COLLECTOR JEDEC EIAJ TOSHI BA TO— 98 SC-43 2— 5P1P Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC DC C. |
| Datasheet |
 S1805 Data Sheet
PDF 78.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S1806 |
Toshiba |
Silicon PNP Transistor |
|
| 2 | S1807 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | S1808 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors |
|
| 10 | S1812 |
API Delevan |
Shielded Surface Mount Inductors |
|
Desde 2024. D4U Semiconductor.
|