Busque con el número de pieza junto con el fabricante o la descripción
S1807 |
Click to view a larger image
| Part Number | S1807 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | ) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1807 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPLEMENTARY USE WITH S1808- FEATURES: . Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808. Unit in mm 5.1 MAX. a 55 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Volt. |
| Features | . Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808. Unit in mm 5.1 MAX. a 55 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO vEBO IB PC [ stg RATING 35 30 800 200 625 150 -55-150 UNIT mA mA mV 1. EMITTER 2. BASE a COLLECTOR TOSHIBA TO-92 SC-43 Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current C. |
| Datasheet |
 S1807 Data Sheet
PDF 73.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S1805 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | S1806 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | S1808 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors |
|
| 10 | S1812 |
API Delevan |
Shielded Surface Mount Inductors |
|
Desde 2024. D4U Semiconductor.
|