| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i... |
| Features |
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-stat... |
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| No. | Part # | Manufacture | Description | Datasheet |
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Infineon Technologies Corporation |
SGP10N60 |
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Fairchild Semiconductor |
FQP10N20C |
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STMicroelectronics |
STP10NB20FP |
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ST Microelectronics |
STP10NB50FP |
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ST Microelectronics |
N-CHANNEL Power MOSFET |
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STMicroelectronics |
N-CHANNEL Power MOSFET |
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STMicroelectronics |
N-Channel MOSFET |
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ST Microelectronics |
STP10NK80Z |
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ST Microelectronics |
STP10NK80ZFP |
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International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
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