P10NB50FP |
Part Number | P10NB50FP |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
Features |
20FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) VISO Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP10NB50 STP10NB50FP 500 500 ± 30 10.6 6.4 42.4 135 1.08 4.5 -65 to 150 150 ( 1... |
Document |
P10NB50FP Data Sheet
PDF 292.04KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | P10NB20FP |
STMicroelectronics |
STP10NB20FP | |
2 | P10N20C |
Fairchild Semiconductor |
FQP10N20C | |
3 | P10N60 |
Infineon Technologies Corporation |
SGP10N60 | |
4 | P10N60C |
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FQP10N60C | |
5 | P10NK60Z |
ST Microelectronics |
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6 | P10NK60ZFP |
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8 | P10NK80Z |
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STP10NK80Z | |
9 | P10NK80ZFP |
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10 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |