P10N20C |
Part Number | P10N20C |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th. |
Features |
• • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP10N20C 9.5 6.0 38 FQPF10N20C 200 9.5 * 6.0 * 38 * ± 30 210 9.5 7.2 5.5 Units V A A A V mJ A mJ . |
Datasheet |
P10N20C Data Sheet
PDF 913.55KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | P10N60 |
Infineon Technologies Corporation |
SGP10N60 | |
2 | P10N60C |
Fairchild Semiconductor |
FQP10N60C | |
3 | P10NB20FP |
STMicroelectronics |
STP10NB20FP | |
4 | P10NB50FP |
ST Microelectronics |
STP10NB50FP | |
5 | P10NK60Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | P10NK60ZFP |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
7 | P10NK70Z |
STMicroelectronics |
N-Channel MOSFET | |
8 | P10NK80Z |
ST Microelectronics |
STP10NK80Z | |
9 | P10NK80ZFP |
ST Microelectronics |
STP10NK80ZFP | |
10 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |