| Description | SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - v... |
| Features | g junction and storage temperature 1) ICpul s VGE EAS 42 42 ±20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55...+150 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Symbol Conditions Max. Value Unit Thermal Resistance Parameter Characteristic IGBT thermal resistance, ... |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
FQP10N60C |
|
|
|
|
Fairchild Semiconductor |
FQP10N20C |
|
|
|
|
STMicroelectronics |
STP10NB20FP |
|
|
|
|
ST Microelectronics |
STP10NB50FP |
|
|
|
|
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET |
|
|
|
|
ST Microelectronics |
STP10NK80Z |
|
|
|
|
ST Microelectronics |
STP10NK80ZFP |
|
|
|
|
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
|
Desde 2024. D4U Semiconductor.
|
Contáctenos
|
Política de Privacidad
