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P10N60 |
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| Part Number | P10N60 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies Corporation |
| Description | SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – ... |
| Features |
g junction and storage temperature
1)
ICpul s VGE EAS
42 42 ±20 70 V mJ
tSC Ptot Tj , Tstg
10 104 -55...+150
µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00
SGP10N60
www.DataSheet4U.com
SGB10N60, SGW10N60
Symbol Conditions Max. Value Unit
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 1.2 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless ... |
| Document |
 P10N60 Data Sheet
PDF 299.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | P10N60C |
Fairchild Semiconductor |
FQP10N60C |
|
| 2 | P10N20C |
Fairchild Semiconductor |
FQP10N20C |
|
| 3 | P10NB20FP |
STMicroelectronics |
STP10NB20FP |
|
| 4 | P10NB50FP |
ST Microelectronics |
STP10NB50FP |
|
| 5 | P10NK60Z |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 6 | P10NK60ZFP |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 7 | P10NK70Z |
STMicroelectronics |
N-Channel MOSFET |
|
| 8 | P10NK80Z |
ST Microelectronics |
STP10NK80Z |
|
| 9 | P10NK80ZFP |
ST Microelectronics |
STP10NK80ZFP |
|
| 10 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
|
Desde 2024. D4U Semiconductor.
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