P10N60C |
Part Number | P10N60C |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl... |
Document |
P10N60C Data Sheet
PDF 0.99MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | P10N60 |
Infineon Technologies Corporation |
SGP10N60 | |
2 | P10N20C |
Fairchild Semiconductor |
FQP10N20C | |
3 | P10NB20FP |
STMicroelectronics |
STP10NB20FP | |
4 | P10NB50FP |
ST Microelectronics |
STP10NB50FP | |
5 | P10NK60Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | P10NK60ZFP |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
7 | P10NK70Z |
STMicroelectronics |
N-Channel MOSFET | |
8 | P10NK80Z |
ST Microelectronics |
STP10NK80Z | |
9 | P10NK80ZFP |
ST Microelectronics |
STP10NK80ZFP | |
10 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |