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P10NB20FP |
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| Part Number | P10NB20FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
| Features |
g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junction T emperature
o o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value ST P10NB20 STP10NB20FP 200 200 ± 30 10 6 40 85 0.68 5.5 2000 -65 to 150 150
(1) ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V 6 4 40 30 ... |
| Document |
 P10NB20FP Data Sheet
PDF 153.95KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
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Desde 2024. D4U Semiconductor.
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