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NP60S10D6 |
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| Part Number | NP60S10D6 |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features . |
| Features |
VDS =100V，ID =60A RDS(ON)(Typ.)=4.6mΩ @VGS=10V RDS(ON)(Typ.)=6.5mΩ @VGS=4.5V
Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 150 °C operating temperature 100% UIS tested
Marking and pin assignment
Application
Synchronus Rectification in DC/DC and AC/DC Converters
Industrial and Motor Drive applications
XXXX—Wafer Information YYYY—Quality Code
Ordering Information
Part Number NP60S10D6-G
Storage Temperature -55°C to +150°C
Package PDFN5 *6-8L-A Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage par. |
| Datasheet |
 NP60S10D6 Data Sheet
PDF 656.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP60S04D6-Sn |
natlinear |
40V N-Channel Enhancement Mode MOSFET |
|
| 2 | NP6008BSR |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 3 | NP6008N |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 4 | NP6020D6-Sn |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 5 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET |
|
| 7 | NP60N04KUG |
Renesas |
N-Channel MOSFET |
|
| 8 | NP60N04MUG |
Renesas |
N-Channel Power MOSFET |
|
| 9 | NP60N04MUK |
Renesas |
N-Channel MOSFET |
|
| 10 | NP60N04NUK |
Renesas |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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