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NDB6060 |
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| Part Number | NDB6060 |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devi. |
| Features | 48A, 60V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise . |
| Datasheet |
 NDB6060 Data Sheet
PDF 360.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDB6060L |
ON Semiconductor |
N-Channel FET |
|
| 2 | NDB6060L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | NDB6060L |
Fairchild |
N-Channel MOSFET |
|
| 4 | NDB6020 |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDB6020P |
ON Semiconductor |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | NDB6020P |
Fairchild |
N-Channel MOSFET |
|
| 7 | NDB603 |
Fairchild |
N-Channel MOSFET |
|
| 8 | NDB6030 |
Fairchild |
N-Channel MOSFET |
|
| 9 | NDB6030L |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDB6030PL |
Fairchild |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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