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NDB6030L |
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| Part Number | NDB6030L |
| Manufacturer | Fairchild |
| Description | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switc. |
| Features | 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP6030L 30 ± 16 52 156 75 0.5 -65 to 175 275 NDB603. |
| Datasheet |
 NDB6030L Data Sheet
PDF 357.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDB6030 |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDB6030PL |
Fairchild |
P-Channel MOSFET |
|
| 3 | NDB603 |
Fairchild |
N-Channel MOSFET |
|
| 4 | NDB603AL |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDB6020 |
Fairchild |
N-Channel MOSFET |
|
| 6 | NDB6020P |
ON Semiconductor |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | NDB6020P |
Fairchild |
N-Channel MOSFET |
|
| 8 | NDB6050 |
Fairchild |
N-Channel MOSFET |
|
| 9 | NDB6050L |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDB6051 |
Fairchild |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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