NDB6030PL |
Part Number | NDB6030PL |
Manufacturer | Fairchild |
Description | These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switc. |
Features | -30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. ________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP6030PL -30 ±16 -30 -90 75 0.5 -65 to 175. |
Datasheet |
NDB6030PL Data Sheet
PDF 56.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NDB6030 |
Fairchild |
N-Channel MOSFET | |
2 | NDB6030L |
Fairchild |
N-Channel MOSFET | |
3 | NDB603 |
Fairchild |
N-Channel MOSFET | |
4 | NDB603AL |
Fairchild |
N-Channel MOSFET | |
5 | NDB6020 |
Fairchild |
N-Channel MOSFET | |
6 | NDB6020P |
ON Semiconductor |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | NDB6020P |
Fairchild |
N-Channel MOSFET | |
8 | NDB6050 |
Fairchild |
N-Channel MOSFET | |
9 | NDB6050L |
Fairchild |
N-Channel MOSFET | |
10 | NDB6051 |
Fairchild |
N-Channel MOSFET |