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NDB6020 |
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| Part Number | NDB6020 |
| Manufacturer | Fairchild |
| Description | These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.. |
| Features | 35 A, 20 V. RDS(ON) = 0.023 Ω @ VGS= 4.5 V RDS(ON) = 0.028 Ω @ VGS= 2.7 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter TC = 25°C unless otherwise note. |
| Datasheet |
 NDB6020 Data Sheet
PDF 376.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDB6020P |
ON Semiconductor |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDB6020P |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDB603 |
Fairchild |
N-Channel MOSFET |
|
| 4 | NDB6030 |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDB6030L |
Fairchild |
N-Channel MOSFET |
|
| 6 | NDB6030PL |
Fairchild |
P-Channel MOSFET |
|
| 7 | NDB603AL |
Fairchild |
N-Channel MOSFET |
|
| 8 | NDB6050 |
Fairchild |
N-Channel MOSFET |
|
| 9 | NDB6050L |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDB6051 |
Fairchild |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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