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| Part Number | MMBT5401LT1 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBT5401LT1 |
| Manufacturer | TGS |
| Title | PNP Transistor |
| Description | The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . |
| Features |
• High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .............................................................................................. -55~+150 °C Junction Temperature ..................................................................................... +150°C Maximu. |
| Part Number | MMBT5401LT1 |
| Manufacturer | Motorola |
| Title | High Voltage Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5401LT1/D High Voltage Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5401LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continu. |
| Features |
ollector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) (VCB = –120 Vdc, IE = 0, TA = 100°C) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO –150 V(BR)CBO –160 V(BR)EBO –5.0 ICES — — –50 –50 nAdc µAdc — — Vdc — Vdc Vdc . |
| Part Number | MMBT5401LT1 |
| Manufacturer | WEJ |
| Title | TRANSISTOR |
| Description | RoHS MMBT5401LT1 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors Features DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V OOperating and storage junction temperature range CTj, Tstg : -55OC to +150OC 2.9 1.9 0.95 0.95 0.4. |
| Features | DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V OOperating and storage junction temperature range CTj, Tstg : -55OC to +150OC 2.9 1.9 0.95 0.95 0.4 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR IC Unit:mm NElectrical Characteristics (Tamp=25 oC unless otherwise specified) OParameter Collector-Base Breakdown Voltage RCo. |
| Part Number | MMBT5401LT1 |
| Manufacturer | Tuofeng Semiconductor |
| Title | PNP Transistor |
| Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Collector-base voltage A V(BR)CBO: -160 V Operating and storage junction temperature range T. |
| Features | Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Collector-base voltage A V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR - 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltag. |
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