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MMBT5401LT1 |
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| Part Number | MMBT5401LT1 |
| Manufacturer | TGS |
| Description | The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMB... |
| Features |
• High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ... -55~+150 °C Junction Temperature . +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .. 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Co... |
| Document |
 MMBT5401LT1 Data Sheet
PDF 27.44KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBT5401LT1 |
Motorola |
High Voltage Transistor |
|
| 2 | MMBT5401LT1 |
ON |
High Voltage Transistor(PNP Silicon) |
|
| 3 | MMBT5401LT1 |
WEJ |
TRANSISTOR |
|
| 4 | MMBT5401LT1 |
Tuofeng Semiconductor |
PNP Transistor |
|
| 5 | MMBT5401LT1G |
ON Semiconductor |
High Voltage Transistor |
|
| 6 | MMBT5401LT3G |
ON Semiconductor |
High Voltage Transistor |
|
Desde 2024. D4U Semiconductor.
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