MMBT5401LT1 |
Part Number | MMBT5401LT1 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5401LT1/D High Voltage Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5401LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Col... |
Features |
ollector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) (VCB = –120 Vdc, IE = 0, TA = 100°C) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO –150 V(BR)CBO –160 V(BR)EBO –5.0 ICES — — –50 –50 nAdc µAdc — — Vdc — Vdc Vdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small –S... |
Document |
MMBT5401LT1 Data Sheet
PDF 189.35KB |
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