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MMBT5401LT1 |
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| Part Number | MMBT5401LT1 |
| Manufacturer | Tuofeng Semiconductor |
| Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0... |
| Features |
Power dissipation
PCM:
0.3 W (Tamb=25℃)
Collector current
ICM: -0.6 Collector-base voltage
A
V(BR)CBO:
-160 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR -
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
voltage
Base-emitter
Tr... |
| Document |
 MMBT5401LT1 Data Sheet
PDF 98.70KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBT5401LT1 |
Motorola |
High Voltage Transistor |
|
| 2 | MMBT5401LT1 |
ON |
High Voltage Transistor(PNP Silicon) |
|
| 3 | MMBT5401LT1 |
WEJ |
TRANSISTOR |
|
| 4 | MMBT5401LT1 |
TGS |
PNP Transistor |
|
| 5 | MMBT5401LT1G |
ON Semiconductor |
High Voltage Transistor |
|
| 6 | MMBT5401LT3G |
ON Semiconductor |
High Voltage Transistor |
|
Desde 2024. D4U Semiconductor.
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