Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | MJE2955T |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJE2955T |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
| Part Number | MJE2955T |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | The MJE2955T (PNP) and MJE3055T (NPN) are silicon complementary power transistors in a TO−220 plastic package intended for use in general purpose amplifier and switching applications. Features: D High Current Gain − Bandwidth Product Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, V. |
| Features | D High Current Gain − Bandwidth Product Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter−Base Voltage, VEB . . . .. |
| Part Number | MJE2955T |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package. / Features ，。 Large DC current(IC=10A),high fT(fT≥2MHz). / Applications 。 General purpose and switching applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications . |
| Features | ，。 Large DC current(IC=10A),high fT(fT≥2MHz). / Applications 。 General purpose and switching applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE2955T Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Em. |
| Part Number | MJE2955T |
| Manufacturer | Motorola |
| Title | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T * *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ. |
| Features |
bol VCEO VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current Base Current 5.0 10 6.0 75 Total Power Dissipation @ TC = 25_C Derate above 25_C MJE3055T, MJE2955T Operating and Storage Junction Temperature Range PD† Watts W/_C 0.6 TJ, Tstg – 55 to + 150 . . . designed for use in general –purpose amplifier and swit. |
| Part Number | MJE2955T |
| Manufacturer | UTC |
| Title | HIGH VOLTAGE TRANSISTOR |
| Description | The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1 TO-220F1 1 TO-251 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MJE2955TL-TA3-T MJE2955TG-TA3-T TO-220 MJE2955TL-TF1-T MJE2955TG-TF1-T TO-220F1 MJE295. |
| Features | SISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Base Current TO-220 TO-220F1 Power Dissipation (TA=25°C) TO-251 TO-252 SYMBOL VCBO VCEO VEBO IC IB PD RATINGS -70 -60 -5 -10 -6 75 18 20 UNIT V V V A A W W W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum . |
| Part Number | MJE2955T |
| Manufacturer | CDIL |
| Title | PNP PLASTIC POWER TRANSISTORS |
| Description | Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation upto Tc=25ºC Derate above 25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Junction Temperature Storage Temperature SYMBOL VCEO VCBO VEBO IC IB PD PD Tj Tstg VALUE. |
| Features | . |
| Part Number | MJE2955T |
| Manufacturer | Multicomp |
| Title | Complementary Power Transistors |
| Description | MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 (Minimum) at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at. |
| Features |
• Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 (Minimum) at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 . |
| Part Number | MJE2955T |
| Manufacturer | TGS |
| Title | Complementary Silicon Power Ttransistors |
| Description | It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction T. |
| Features | . |
| Part Number | MJE2955T |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= -4A ·Complement to Type MJE3055T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applic. |
| Features | TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -8.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.8 V ICEO Collector Cutoff Current. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJE2955 |
Fairchild |
PNP Silicon Transistor |
|
| 2 | MJE2955 |
GME |
Plastic-Encapsulate Transistors |
|
| 3 | MJE2955 |
Motorola |
(MJE2955 / MJE3055) POWER TRANSISTORS |
|
| 4 | MJE2955 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | MJE2955-G |
Comchip |
General Purpose Transistor |
|
| 6 | MJE2955A |
nELL |
Complementary Silicon power transistors |
|
| 7 | MJE2955T |
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 8 | MJE2955T |
Fairchild |
PNP Silicon Transistor |
|
| 9 | MJE2955T |
Central Semiconductor |
PNP Transistor |
|
| 10 | MJE2955T |
SavantIC |
Silicon PNP Power Transistors |
|
Desde 2024. D4U Semiconductor.
|