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MJE2955T |
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| Part Number | MJE2955T |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= -4A ·Complement to Type MJE3055T ·Minimum Lot-to-Lot variations for robust device performance and ... |
| Features |
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
-60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
-1.1 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A
-8.0 V
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -4V
-1.8 V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -30V; IB= 0
VCB= -70V; IE= 0 VCB= -70V; IE= 0;TC= 150℃
VEB= -5V; IC= 0
-0.7 mA
-1.0 -10
mA
-5.0 mA
hFE-1
DC Current Gain
IC=... |
| Document |
 MJE2955T Data Sheet
PDF 208.61KB |
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Desde 2024. D4U Semiconductor.
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