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MJE2955T |
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| Part Number | MJE2955T |
| Manufacturer | ON |
| Description | MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain... |
| Features |
• High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC IB PD (Note 1) 60 70 5.0 10 6.0 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality sho... |
| Document |
 MJE2955T Data Sheet
PDF 58.12KB |
Similar Datasheet
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| 1 | MJE2955 |
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| 2 | MJE2955 |
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Desde 2024. D4U Semiconductor.
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