| Description | This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar... |
| Features |
• 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V • Low gate charge ( typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D ● TO-252 TO-251 ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pul... |
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| No. | Part # | Manufacture | Description | Datasheet |
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H&M Semiconductor |
N-CHANNEL MOSFET |
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H&M Semiconductor |
N-CHANNEL MOSFET |
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H&M Semiconductor |
N-CHANNEL MOSFET |
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H&M Semiconductor |
600V N-Channel MOSFET |
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H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
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H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
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H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
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H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
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BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors |
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BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors |
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Desde 2024. D4U Semiconductor.
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