HM5N60K |
Part Number | HM5N60K |
Manufacturer | H&M Semiconductor |
Description | This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching ... |
Features |
• 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V • Low gate charge ( typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D ● TO-252 TO-251 ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC ... |
Document |
HM5N60K Data Sheet
PDF 448.63KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HM5N60 |
H&M Semiconductor |
N-CHANNEL MOSFET | |
2 | HM5N60 |
H&M Semiconductor |
N-CHANNEL MOSFET | |
3 | HM5N60F |
H&M Semiconductor |
N-CHANNEL MOSFET | |
4 | HM5N60I |
H&M Semiconductor |
600V N-Channel MOSFET | |
5 | HM5N06APR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
6 | HM5N06AR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
7 | HM5N06R |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
8 | HM5N20R |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | HM50 |
BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors | |
10 | HM50-xxx |
BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors |