HM5N06APR H&M Semiconductor N-Channel Enhancement Mode Power MOSFET Datasheet. existencias, precio

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HM5N06APR

H&M Semiconductor
HM5N06APR
HM5N06APR HM5N06APR
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Part Number HM5N06APR
Manufacturer H&M Semiconductor
Description The HM5N06$35 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON)...
Features
● VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply HM5N06'68 D G S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package HM5N06$35HM5N06$35 SOT-89-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Contin...

Document Datasheet HM5N06APR Data Sheet
PDF 461.95KB
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