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HM5N60I |
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| Part Number | HM5N60I |
| Manufacturer | H&M Semiconductor |
| Description | This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching ... |
| Features |
• 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V • Low gate charge ( typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D ● TO-252 TO-251 ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC ... |
| Document |
 HM5N60I Data Sheet
PDF 448.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HM5N60 |
H&M Semiconductor |
N-CHANNEL MOSFET |
|
| 2 | HM5N60 |
H&M Semiconductor |
N-CHANNEL MOSFET |
|
| 3 | HM5N60F |
H&M Semiconductor |
N-CHANNEL MOSFET |
|
| 4 | HM5N60K |
H&M Semiconductor |
600V N-Channel MOSFET |
|
| 5 | HM5N06APR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | HM5N06AR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | HM5N06R |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 8 | HM5N20R |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 9 | HM50 |
BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors |
|
| 10 | HM50-xxx |
BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors |
|
Desde 2024. D4U Semiconductor.
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