HM5N06R |
Part Number | HM5N06R |
Manufacturer | H&M Semiconductor |
Description | The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS =60V,ID =5A RDS... |
Features |
● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package HM5N06R HM5N06R SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Pow... |
Document |
HM5N06R Data Sheet
PDF 282.66KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | HM5N06APR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | HM5N06AR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | HM5N20R |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | HM5N60 |
H&M Semiconductor |
N-CHANNEL MOSFET | |
5 | HM5N60 |
H&M Semiconductor |
N-CHANNEL MOSFET | |
6 | HM5N60F |
H&M Semiconductor |
N-CHANNEL MOSFET | |
7 | HM5N60I |
H&M Semiconductor |
600V N-Channel MOSFET | |
8 | HM5N60K |
H&M Semiconductor |
600V N-Channel MOSFET | |
9 | HM50 |
BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors | |
10 | HM50-xxx |
BI Technologies |
HM50 / HM51 Series / Miniature Power Inductors |