Part Number | HGT1S12N60C3S |
Distributor | Stock | Price | Buy |
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Part Number | HGT1S12N60C3S |
Manufacturer | Fairchild Semiconductor |
Title | N-Channel IGBT |
Description | The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v. |
Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC mot. |
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---|---|---|---|---|
1 | HGT1S12N60C3 |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGT1S12N60C3DS |
Fairchild Semiconductor |
N-Channel IGBT | |
3 | HGT1S12N60C3DS |
Intersil Corporation |
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4 | HGT1S12N60A4DS |
Fairchild Semiconductor |
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5 | HGT1S12N60A4DS |
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6 | HGT1S12N60A4DS |
ON Semiconductor |
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7 | HGT1S12N60A4S |
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8 | HGT1S12N60A4S9A |
Fairchild Semiconductor |
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9 | HGT1S12N60B3DS |
Fairchild Semiconductor |
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10 | HGT1S12N60B3DS |
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