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| Part Number | HGT1S12N60A4DS |
| Distributor | Stock | Price | Buy |
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| Part Number | HGT1S12N60A4DS |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. Thes. |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switchin. |
| Part Number | HGT1S12N60A4DS |
| Manufacturer | ON Semiconductor |
| Title | N-Channel IGBT |
| Description | SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high in. |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used in anti−parallel is the development type TA49371. This IGBT is ideal for many high voltage switching. |
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| 1 | HGT1S12N60A4S |
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| 2 | HGT1S12N60A4S9A |
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| 3 | HGT1S12N60B3DS |
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| 4 | HGT1S12N60B3DS |
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| 5 | HGT1S12N60B3S |
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| 6 | HGT1S12N60C3 |
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| 7 | HGT1S12N60C3DS |
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| 8 | HGT1S12N60C3DS |
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| 9 | HGT1S12N60C3S |
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| 10 | HGT1S12N60C3S |
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Desde 2024. D4U Semiconductor.
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