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| Part Number | HGT1S12N60C3DS |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGT1S12N60C3DS |
| Manufacturer | Intersil Corporation |
| Title | N-Channel IGBT |
| Description | HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impeda. |
| Features | of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage . |
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|---|---|---|---|---|
| 1 | HGT1S12N60C3 |
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| 2 | HGT1S12N60C3S |
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| 3 | HGT1S12N60C3S |
Intersil Corporation |
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| 4 | HGT1S12N60A4DS |
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| 5 | HGT1S12N60A4DS |
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| 6 | HGT1S12N60A4DS |
ON Semiconductor |
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| 7 | HGT1S12N60A4S |
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| 8 | HGT1S12N60A4S9A |
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| 9 | HGT1S12N60B3DS |
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| 10 | HGT1S12N60B3DS |
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N-Channel IGBT |
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