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HGT1S12N60C3S |
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| Part Number | HGT1S12N60C3S |
| Manufacturer | Fairchild Semiconductor |
| Description | The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
January 1997
Features
• 24A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . .... |
| Document |
 HGT1S12N60C3S Data Sheet
PDF 131.24KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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