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| Part Number | FDMC86160ET100 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDMC86160ET100 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS (on) is required in small spaces such as High performa. |
| Features |
• Extended TJ Rating to 175°C • Shielded Gate MOSFET Technology • Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A • Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A • High Performance Technology for Extremely Low rDS(on) • Termination is Lead−free and RoHS Compliant Applications • Bridge Topologies • Synchronous Rectifier DATA SHEET www.onsemi.com VDS 100 V rDS(on) MAX 14 mW @ 10 V 23 mW @ 6 V ID MAX 43. |
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Desde 2024. D4U Semiconductor.
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