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FDMC86160ET100 |
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| Part Number | FDMC86160ET100 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is we... |
| Features |
• Extended TJ Rating to 175°C • Shielded Gate MOSFET Technology • Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A • Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A • High Performance Technology for Extremely Low rDS(on) • Termination is Lead−free and RoHS Compliant Applications • Bridge Topologies • Synchronous Rectifier DATA SHEET www.onsemi.com VDS 100 V rDS(on) MAX 14 mW @ 10 V 23 mW @ 6 V ID MAX 43 A Pin 1 Pin 1 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P (Power 33) CASE 483 AW MARKING DIAGRAM ZXYYKK FDMC 86160ET Z = Assembly Plant Code XYY = 3−Digit Date Code Format KK = 2−Alphan... |
| Document |
 FDMC86160ET100 Data Sheet
PDF 470.79KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC86160ET100 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC86160 |
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N-Channel Power Trench MOSFET |
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| 3 | FDMC86160 |
ON Semiconductor |
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| 4 | FDMC86102 |
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| 5 | FDMC86102 |
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| 6 | FDMC86102L |
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|
Desde 2024. D4U Semiconductor.
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