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| Part Number | FDMC86160 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDMC86160 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performan. |
| Features |
• Shielded Gate MOSFET Technology • Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A • Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A • High Performance Technology for Extremely Low rDS(on) • This Device is Lead−Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage 100 V VGSS Gate−Source Voltage ±20 V ID Drain Cu. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC86160ET100 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC86160ET100 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMC86102 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 4 | FDMC86102 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC86102L |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FDMC86102L |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FDMC86102LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 8 | FDMC86102LZ |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDMC86106LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 10 | FDMC86116LZ |
Fairchild Semiconductor |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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