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FDMC86160ET100 |
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| Part Number | FDMC86160ET100 |
| Manufacturer | Fairchild Semiconductor |
| Description | Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely ... |
| Features |
General Description
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performanc... |
| Document |
 FDMC86160ET100 Data Sheet
PDF 210.88KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC86160ET100 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDMC86160 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 3 | FDMC86160 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMC86102 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 5 | FDMC86102 |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FDMC86102L |
Fairchild Semiconductor |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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