BUT12F TRANSISTOR Datasheet, Distribuidor, stock y mejor precio

Part Number	BUT12F
Manufacturer	NXP
Title	Silicon diffused power transistors
Description	High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage BUT12F; BUT12AF PINNING PIN 1 2 3 mb base collector emitter mounting base; electrically isolated fro.
Features	e see Figs 2 and 4 see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 6 5 8 20 23 0.8 A A A A W µs see Figs 7 and 9 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 13 1 Philips Semiconductors Product speciﬁcation Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mou.

No.	Parte #	Fabricante	Descripción
1	BUT12	NXP	Silicon diffused power transistors
2	BUT12	Wing Shing Computer Components	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
3	BUT12A	Wing Shing Computer Components	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
4	BUT12A	NXP	Silicon diffused power transistors
5	BUT12AF	Wing Shing Computer Components	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
6	BUT12AF	NXP	Silicon diffused power transistors
7	BUT12AF	SavantIC	SILICON POWER TRANSISTOR
8	BUT12AI	NXP	Silicon Diffused Power Transistor
9	BUT12AX	INCHANGE	NPN Transistor
10	BUT12AX	SavantIC	SILICON POWER TRANSISTOR

BUT12F Datasheet. existencias, precio