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| Part Number | BUT12AF |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUT12AF |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT12F BUT12AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 . |
| Features | stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT12F IC=0.1A; IB=0;L=25mH BUT12AF BUT12F BUT12AF BUT12F BUT12AF BUT12F BUT12AF IC=6A; IB=1.2A CONDITIONS www.datasheet4u.com BUT12F BUT12AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=5A; IB=1A IC=6A; IB=1.2A 1.5 IC=5A; IB=1A VCE=85. |
| Part Number | BUT12AF |
| Manufacturer | Wing Shing Computer Components |
| Title | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| Description | SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat. |
| Features | = 0V MIN Tmb 25 -55 MAX 1000 450 5 8 4 8 40 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector-emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capa. |
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| 5 | BUT12AX |
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| 7 | BUT12 |
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| 8 | BUT12F |
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| 9 | BUT12F |
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Desde 2024. D4U Semiconductor.
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