BUT12A DESCRIPTION) Datasheet, Distribuidor, stock y mejor precio

Part Number	BUT12A
Manufacturer	NXP
Title	Silicon diffused power transistors
Description	High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage BUT12; BUT12A APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage 2 1 MBB008 3 MBK106 1 2 3 PINNING PIN 1 2 3 DESCRIPTION base collect.
Features	C; see Fig.2 resistive load; see Figs 12 and 13 6 5 8 20 125 0.8 A A A A W µs see Fig.8 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product speciﬁcation Silicon diffused pow.

No.	Parte #	Fabricante	Descripción
1	BUT12	NXP	Silicon diffused power transistors
2	BUT12	Wing Shing Computer Components	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
3	BUT12AF	Wing Shing Computer Components	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
4	BUT12AF	NXP	Silicon diffused power transistors
5	BUT12AF	SavantIC	SILICON POWER TRANSISTOR
6	BUT12AI	NXP	Silicon Diffused Power Transistor
7	BUT12AX	INCHANGE	NPN Transistor
8	BUT12AX	SavantIC	SILICON POWER TRANSISTOR
9	BUT12F	NXP	Silicon diffused power transistors
10	BUT12F	SavantIC	SILICON POWER TRANSISTOR

BUT12A Datasheet. existencias, precio