BUT12AF |
Part Number | BUT12AF |
Manufacturer | NXP (https://www.nxp.com/) |
Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage B... |
Features |
e see Figs 2 and 4 see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 6 5 8 20 23 0.8 A A A A W µs see Figs 7 and 9 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum... |
Document |
BUT12AF Data Sheet
PDF 78.04KB |
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