Busque con el número de pieza junto con el fabricante o la descripción
BUT12F |
Click to view a larger image
| Part Number | BUT12F |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage B... |
| Features |
e see Figs 2 and 4 see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 6 5 8 20 23 0.8 A A A A W µs see Figs 7 and 9 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum... |
| Document |
 BUT12F Data Sheet
PDF 78.04KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUT12 |
NXP |
Silicon diffused power transistors |
|
| 2 | BUT12 |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
|
| 3 | BUT12A |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
|
| 4 | BUT12A |
NXP |
Silicon diffused power transistors |
|
| 5 | BUT12AF |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
|
| 6 | BUT12AF |
NXP |
Silicon diffused power transistors |
|
Desde 2024. D4U Semiconductor.
|