Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BDT61 |
| Part Number | BDT61 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·. |
| Features | ERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 2.5 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistors BDT61/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT61 60 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT60AF |
INCHANGE |
PNP Transistor |
|
| 8 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 9 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 10 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
|