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AOB14N50 14A N-Channel MOSFET

AOB14N50


AOB14N50
Part Number AOB14N50
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AOB14N50

INCHANGE
AOB14N50
Part Number AOB14N50
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pluse 5.
Features
·Drain Current
  –ID= 14A@ TC=25℃
·Drain Source Voltage- : VDSS= 500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V.

AOB14N50

Freescale
AOB14N50
Part Number AOB14N50
Manufacturer Freescale
Title 14A N-Channel MOSFET
Description The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C iss and Crss along with guaranteed avalanche capability these parts c.
Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 14A < 0.38Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol AOT14N50/AOB14N50 Parameter Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derat.

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