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SIGC158T120R3LE |
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| Part Number | SIGC158T120R3LE |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) ... |
| Features |
1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules Applications: drives Chip Type VCE IC Die Size SIGC158T120R3LE 1200V 150A 12.56 x 12.56 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 12.56 x 12.56 8 x (5.423 x 2.641... |
| Document |
 SIGC158T120R3LE Data Sheet
PDF 183.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SIGC158T120R3L |
Infineon Technologies |
IGBT |
|
| 2 | SIGC158T120R3 |
Infineon Technologies |
IGBT |
|
| 3 | SIGC158T120R3E |
Infineon |
IGBT |
|
| 4 | SIGC158T170R3 |
Infineon Technologies |
IGBT |
|
| 5 | SIGC158T170R3E |
Infineon |
IGBT |
|
| 6 | SIGC156T120R2C |
Infineon Technologies |
IGBT |
|
| 7 | SIGC156T120R2CL |
Infineon Technologies |
IGBT |
|
| 8 | SIGC156T120R2CQ |
Infineon Technologies |
IGBT |
|
| 9 | SIGC156T120R2CS |
Infineon Technologies |
IGBT |
|
| 10 | SIGC156T60NR2C |
Infineon Technologies |
IGBT |
|
Desde 2024. D4U Semiconductor.
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