Part Number | SIGC158T170R3 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Title | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC158T170R3EX1SA) |
Description | AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights ... |
Features |
• 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC158T170R3 VCE ICn Die Size 12.57 x 12.57 mm2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recom... |
Document |
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Stock | 0 In Stock |
Price | 150000 units: 23.57451 USD 72000 units: 24.44764 USD 15000 units: 25.32077 USD 7200 units: 26.1939 USD 2900 units: 27.06703 USD 1500 units: 27.94016 USD 1431 units: 28.81329 USD
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Part Number | SIGC158T170R3E |
Manufacturer | Infineon |
Title | IGBT |
Description | AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History . |
Features |
1700V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules Applications: drives Chip Type VCE IC Die Size SIGC158T170R3E 1700V 125A 12.57 x 12.57 mm2 C G E Package sawn on fo. |
Document | SIGC158T170R3E datasheet pdf |
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