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SIGC156T120R2CL |
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| Part Number | SIGC156T120R2CL |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given. |
| Features |
• 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM100GD120DLC Applications: • drives C G E Chip Type VCE ICn Die Size 12.59 X 12.59 mm2 Package sawn on foil Ordering Code Q67041A4663-A003 SIGC156T120R2CL 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject. |
| Datasheet |
 SIGC156T120R2CL Data Sheet
PDF 95.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SIGC156T120R2C |
Infineon Technologies |
IGBT |
|
| 2 | SIGC156T120R2CQ |
Infineon Technologies |
IGBT |
|
| 3 | SIGC156T120R2CS |
Infineon Technologies |
IGBT |
|
| 4 | SIGC156T60NR2C |
Infineon Technologies |
IGBT |
|
| 5 | SIGC156T60SNR2C |
Infineon |
IGBT |
|
| 6 | SIGC158T120R3 |
Infineon Technologies |
IGBT |
|
| 7 | SIGC158T120R3E |
Infineon |
IGBT |
|
| 8 | SIGC158T120R3L |
Infineon Technologies |
IGBT |
|
| 9 | SIGC158T120R3LE |
Infineon |
IGBT |
|
| 10 | SIGC158T170R3 |
Infineon Technologies |
IGBT |
|
Desde 2024. D4U Semiconductor.
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